| 1. | The method of determining interstitial oxygen content in silicon by infrared absorption
硅晶体中间隙氧含量的红外吸收测量方法 |
| 2. | Oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
硅片氧沉淀特性的测定-间隙氧含量减少法 |
| 3. | Finally , the effect of boron and interstitial oxygen on the light degradation are studied
作为本文的主要内容，对影响太阳电池光衰减的主要因素?硼、氧进行了研究。 |
| 4. | Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
通过测量间隙氧含量的减少表征硅片氧沉淀特性的方法 |
| 5. | In order to avoid light degradation , low interstitial oxygen content and low boron concentration b - doped p - type cz - si material should be used , for example , the resistivity can be from 5 - 10 . cm , the efficiency has reached to 22 . 0 %
上述研究工作表明：为了避免光衰减，提高硅片少子寿命，应该选择低氧浓度的硅片，并降低硼的掺杂浓度，即：使用高阻材料制作太阳电池。 |
| 6. | Moreover , concentrations of interstitial oxygen in samples changed after fast neutron irradiation . the interstitial oxygen concentration of the samples decreased with increasing of irradiation dosage . this result can be explained in terms of higher generation rates of ( v - o ) complex
另外，快中子辐照对于直拉硅的间隙氧含量有很大影响，间隙氧含量随着辐照剂量的增加而减少，这主要归于样品中产生了大量的( v - o )复合体。 |
| 7. | In this part , the issues and mechanism of light degradation of b - doped p - type cz - si solar cells are introduced firstly , it was clarified that boron and interstitial oxygen are major components of defect center for light degradation of b - doped cz - si solar cells . then in the experiment the b - doped cz - si is chosen as the substrates and annealled at different temperature
文中首先介绍了掺硼单晶硅太阳电池的光照衰减问题及衰减机制，然后以p型掺硼单晶硅为实验样品，经过不同温度的热处理，对影响光衰减的主要因素硼、氧进行了研究。 |
| 8. | After annealing at 600 , because of formation of multi - vacancy - type defects that have long positron lifetime , positron annihilation average lifetime increased . when the average positron lifetime increased to maximum value ( 360ps ) , the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ) . this result suggested that oxygen was involved in the formation of multi - vacancy - type defects
正电子湮没技术测试证明，快中子辐照直拉硅中在大约600退火时产生的多空位缺陷具有较长正电子寿命，可以使正电子平均寿命增加，当样品的正电子平均寿命达到最大时( 360ps ) ，其间隙氧含量降到一个极小值( 4 10 ~ ( 17 ) atoms / cm ~ 3 ) ，这说明氧参与了这些缺陷的形成。 |
